IndiumV3, Chine, Analysis, bibRecord, 000294

Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents

Identifieur interne : 000294 ( Chine/Analysis ); précédent : 000293; suivant : 000295

Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents

Auteurs : RBID : Pascal:13-0357760

Descripteurs français

Pascal (Inist)
- Diode électroluminescente, Basse tension, Algorithmique, Précision élevée, Composé ternaire, Nitrure de gallium, Nitrure d'indium, InGaN.

English descriptors

KwdEn :
- Algorithmics, Gallium nitride, High precision, Indium nitride, Light emitting diode, Low voltage, Ternary compound.

Abstract

We propose an experimental method that deter mines junction temperatures in light-emitting diodes by measuring currents while holding the low forward voltages constant. In this procedure, we first calibrate current-temperature-relationship parameters under the condition of negligible thermal generation. With one of the two parametric values, we discover the existence of a forward voltage peak that yields most sensitive measurements of the junction temperature. Results show a nearly linear relationship between the algorithmic currents and temperature reciprocals with high testing precision.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 000472
to stream Main, to step Repository: 000F45
to stream Chine, to step Extraction: 000294

Links to Exploration step

Pascal:13-0357760

Le document en format XML

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<front><div type="abstract" xml:lang="en">We propose an experimental method that deter mines junction temperatures in light-emitting diodes by measuring currents while holding the low forward voltages constant. In this procedure, we first calibrate current-temperature-relationship parameters under the condition of negligible thermal generation. With one of the two parametric values, we discover the existence of a forward voltage peak that yields most sensitive measurements of the junction temperature. Results show a nearly linear relationship between the algorithmic currents and temperature reciprocals with high testing precision.</div>
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Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents

Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents

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Abstract

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